Silicide characterization at alumina–niobium interfaces

Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most pervasive, electrically active extended defect at 3C-SiC(111) surfaces, and it can be electrical...

Characterization of Interfaces

On the atomic scale the mterfaclal region of a solid 1s characterized by (a) chemical composltlon types and concentrations of atoms, (b) geometrrcal structure mutual arrangement of the atoms, long-range ordering, topography and defect structure, (c) electronic propertles surface potential, interface states As a result of the tendency of mmlmahzatlon of the Gibbs free energy, the geometric and e...

Endotaxial silicide nanowires.

We demonstrate the growth of self-assembled nanowires of cobalt silicide on Si(111), (100), and (110) substrates during deposition of Co onto a heated Si substrate. Silicide islands form via an endotaxial mechanism, growing into the substrate along inclined Si{111} planes, which breaks the symmetry of the surface and leads to a long, thin nanowire shape. During growth, both the length and width...

Characterization of protein-protein interfaces.

We analyze the characteristics of protein-protein interfaces using the largest datasets available from the Protein Data Bank (PDB). We start with a comparison of interfaces with protein cores and non-interface surfaces. The results show that interfaces differ from protein cores and non-interface surfaces in residue composition, sequence entropy, and secondary structure. Since interfaces, protei...